Active neural network determination of endpoint in a plasma etch

Details Active neural network determination of endpoint in a plasma etch Active neural network determination of endpoint in a plasma etch

1995-05-19

1997-08-05

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 60, 1566261, 438 9, 36446828, G01N 2100, H05H 100

Patent

active

056538944

ABSTRACT:
The present invention is predicated upon the fact that a process signature from a plasma process used in fabricating integrated circuits contains information about phenomena which cause variations in the fabrication process such as age of the plasma reactor, densities of the wafers exposed to the plasma, chemistry of the plasma, and concentration of the remaining material. In accordance with the present invention, a method for using neural networks to determine plasma etch end-point times in an integrated circuit fabrication process is disclosed. The end-point time is based on in-situ monitoring of at least two parameters during the plasma etch process. After the neural network is trained to associate a certain condition or set of conditions with the endpoint of the process, the neural network is used to control the process.

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