Active matrix display device

Details Active matrix display device Active matrix display device

1998-09-11

2000-11-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, 257369, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

061473758

ABSTRACT:
A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. The thickness of the oxide is determined depending on the purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric fields are applied to these offset regions from the gate electrode.

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