Activation plate for electroless and immersion plating of...

Details Activation plate for electroless and immersion plating of... Activation plate for electroless and immersion plating of...

2005-12-13

2005-12-13

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000, C438S613000, C438S614000, C438S782000, C205S203000, C205S205000, C205S212000, C205S213000, C205S201000

Reexamination Certificate

active

06974776

ABSTRACT:
The invention provides a method of plating an integrated circuit. An activation plate is positioned adjacent to at least one integrated circuit. The integrated circuit includes a plurality of bond pads comprising a bond-pad metal, and the activation plate also comprises the bond-pad metal. A layer of electroless nickel is plated on the bond pads and the activation plate, and a layer of gold is plated over the layer of electroless nickel on the bond pads and the activation plate. An integrated circuit with bond pads plated using the activation plate, and a system for plating an integrated circuit is also disclosed.

REFERENCES:
patent: 6028011 (2000-02-01), Takase et al.
patent: 6362089 (2002-03-01), Molla et al.
patent: 2002/0096765 (2002-07-01), Ling et al.

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