Access device having vertical channel and related...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S328000, C257S330000, C257SE27096, C257SE21410, C257SE29131, C257SE29262, C438S156000, C438S206000, C438S268000

Reexamination Certificate

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08058683

ABSTRACT:
An access device and a semiconductor device are disclosed. The access device includes a vertically oriented channel separating a lower source/drain region and an upper source/drain region, a gate dielectric disposed on the channel, and a unified gate electrode/connection line coupled to the channel across the gate dielectric, wherein the unified gate electrode/connection line comprises a descending lip portion disposed proximate to the gate dielectric and overlaying at least a portion of the lower source/drain region.

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