Acceleration sensor using MIS-like transistors

Details Acceleration sensor using MIS-like transistors Acceleration sensor using MIS-like transistors

1995-03-14

1996-07-30

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257418, 257420, 73514160, 73514220, 73514290, 73514360, 73DIG1, H01L 2982

Patent

active

055414370

ABSTRACT:
In an acceleration sensor having movable gates and a movable electrode and having a signal processing portion, the movable gates generate a differential voltage from acceleration in one direction and its output signal is fed back to the movable electrode. The balance of the movable portion is kept using an electrostatic force which cancels the acceleration acting on the movable portion, and signal detection is stabilized using closed loop control. Since signal detection is on a differential basis, acceleration can be detected in only one direction. Since a change in current is detected as a voltage difference, no carrier wave is required. Since MISFETs having movable gates are formed in pairs, there is no influence of temperature drifts. The use of a differential signal similarly cancels the influence of fluctuations of the power supply. Configuration of an acceleration sensor is thus simplified.

REFERENCES:
patent: 4571661 (1986-02-01), Hoshino
patent: 5095750 (1992-03-01), Suzuki et al.
patent: 5103279 (1992-04-01), Gutteridge
patent: 5285097 (1994-02-01), Hirai
patent: 5314572 (1994-05-01), Core et al.
patent: 5326726 (1994-07-01), Tsang et al.
Core, et al: "Fabrication Technology for an Integrated Surface-Micromachined Sensor", Solid State Technology, Oct. 1993, pp. 39-47.
Dunn, et al: "Automotive Silicon Sensor Integration", SAE Technical Paper Series, 920471, pp. 1-6, Feb. 24-28, 1992.
Payne, et al: "Surface Micromachined Accelerometer: A Technology Update", SAE 910496, Feb. 25, 1991, pp. 127-135.
Nathanson, et al: "The Resonant Gate Transistor", IEEE Trnasactions On Electron Devices, vol. Ed-14, No. 3, Mar. 1967 pp. 117-133.
Nathanson, et al: "A Resonant--Gate Silicon Surface Transistor with High-Q Band-Pass Properties", Applied Physics Letters, vol. 7, No. 4, Aug. 15, 1965 - pp. 84-86.

Affiliated with

Also associated with

Rating

Acceleration sensor using MIS-like transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Acceleration sensor using MIS-like transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Acceleration sensor using MIS-like transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1661091