Accelerated test method for ferroelectric memory device

Details Accelerated test method for ferroelectric memory device Accelerated test method for ferroelectric memory device

2006-09-19

2006-09-19

Lamarre, Guy (Department: 2138)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Memory testing

C714S721000, C714S722000, C714S724000

Reexamination Certificate

active

07111210

ABSTRACT:
An accelerated test method evaluates, under accelerated conditions (a temperature T2and a voltage V2), an endurance characteristic of a ferroelectric memory device having a capacitor element including a ferroelectric film under actual operating conditions (a temperature T1and a voltage V1). An acceleration factor (K) required to evaluate the endurance characteristic is derived by using an expression: logK=A(1/V1−1/V2)+B(1/V1T1−1/V2T2) (where each of A and B is a constant).

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