Accelerated low power fatigue testing of FRAM

Details Accelerated low power fatigue testing of FRAM Accelerated low power fatigue testing of FRAM

2007-11-27

2007-11-27

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189040, C365S190000

Reexamination Certificate

active

11260987

ABSTRACT:
Systems and methods fatigue a ferroelectric memory device. Within a single cycle, a group of selected ferroelectric memory cells is fatigued by reading a first logical value from the cells while also writing a second logical value to the memory cells. The first logical value is temporarily stored into latches of sense amplifiers associated with the selected memory cells in order to decipher logical values. Subsequently, the first logical value is written back to the ferroelectric memory cells and a cycle of the fatigue operation is ended.

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patent: 7200028 (2007-04-01), Yamamura
patent: 2004/0208041 (2004-10-01), Maruyama

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