Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-30
2009-02-03
Tran, Minh-Loan T (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S306000, C438S526000, C438S527000, C438S529000, C257SE21043, C257SE21044, C257SE21049, C257SE21054
Reexamination Certificate
active
07485536
ABSTRACT:
A method including forming a channel region between source and drain regions in a substrate, the channel region including a first dopant profile; and forming a barrier layer between the channel region and a well of the substrate, the barrier layer including a second dopant profile different from the first dopant profile. An apparatus including a gate electrode on a substrate; source and drain regions formed in the substrate and separated by a channel region; and a barrier layer between a well of the substrate and the channel region, the barrier layer including a dopant profile different than a dopant profile of the channel region and different than a dopant profile of the well. A system including a computing device including a microprocessor, the microprocessor including a plurality of transistor devices formed in a substrate, each of the plurality of transistor devices including a gate electrode on the substrate; source and drain regions formed in the substrate and separated by a channel region; and a barrier layer between a well of the substrate and the channel region.
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Chau Robert S.
Doyle Brian S.
Jin Been-Yih
Kavalieros Jack T.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Tran Minh-Loan T
Yang Minchul
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