8-mirror microlithography projection objective

Details 8-mirror microlithography projection objective 8-mirror microlithography projection objective

2007-02-13

2007-02-13

Nguyen, Thong (Department: 2872)

Optical: systems and elements

Compound lens system

With curved reflective imaging element

C359S366000, C359S857000, C355S071000, C378S034000

Reexamination Certificate

active

10418515

ABSTRACT:
There is provided a microlithographic projector lens for EUV-lithography with a wavelegth in a range of 10–30 nm, an incident aperture diaphragm and an emergent aperture diaphragm for the transformation of an object field in an object plane into an image field in an image plane. The invention has a microlithographic projector lens that includes a first, second, third, fourth, fifth, sixth, seventh and eighth mirror, and a beam path from the object plane to the image plane that is free from obscuration.

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