Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2005-12-13
2005-12-13
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Capacitors
C257S300000
Reexamination Certificate
active
06975531
ABSTRACT:
A high density vertical three transistor memory cell is provided. The high density vertical three transistor memory cell is formed in a vertical pillar. The vertical pillar includes a first vertical transfer device having a source region, a drain region, and a body region therebetween on a first side of the vertical pillar. The vertical pillar also includes a second vertical transfer device having a source region, a drain region, and a body region therebetween on a second side of the vertical pillar. A write data wordline opposes the first vertical transfer device. A read data wordline opposes the second vertical transfer device. A storage capacitor is coupled to the drain region of the first vertical transfer device. The storage capacitor further serves as a gate for a third transistor.
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Phan Trong
Schwegman Lundberg Woessner & Kluth P.A.
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