5-Transistor memory cell which can be reliably read and written

Details 5-Transistor memory cell which can be reliably read and written 5-Transistor memory cell which can be reliably read and written

1985-09-19

1988-06-07

Moffitt, James

Static information storage and retrieval

Read/write circuit

Precharge

365154, G11C 700, G11C 1140

Patent

active

047501553

ABSTRACT:
A five transistor memory cell that can be reliably read and written from a single data line. The cell includes two inverters and a pass transistor. The cell read/write circuitry includes an address supply voltage source which is maintained at a first level during write and at a second level during read selected to reduce read disturbance. The memory cell read circuitry includes a circuit for precharging the cell data line prior to read. The state of the memory cell is continuously available at output nodes to control other circuitry even during the read operation.

REFERENCES:
patent: 3644907 (1972-02-01), Gricchi et al.
patent: 4189782 (1980-07-01), Dingwall
Holt, Electronic Circuits Digital and Analog, 1978 (John Wiley & Sons, Inc.), pp. 293, 294.

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