4N pre-fetch memory data transfer system

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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Details

C365S219000, C365S233100, C365S194000, C365S207000

Reexamination Certificate

active

10990990

ABSTRACT:
A semiconductor storage device has a data transfer circuit capable of reducing the latency, including a control circuit for frequency-dividing external clock signal to generate readout clocks, first to fourth amplifier circuits for amplifying read data corresponding to first and fourth addresses, based on readout clock signals, a first multiplexer receiving and selectively outputting temporally preceding and temporally succeeding first and second output data from two amplifier circuits associated with two even addresses, a second multiplexer receiving and selectively outputting temporally preceding and temporally succeeding third and fourth output data from two amplifier circuits associated with two odd addresses, first and second latch circuits for latching and outputting second and fourth output data, a third multiplexer receiving first and third data and outputting the latched data in the read address sequence, a fourth multiplexer receiving second and fourth data and outputting the latched data in the read address sequence, first and second registers receiving outputs of the third and fourth multiplexers, and a fifth multiplexer sending out two outputs each of the first and second registers, totaling at four outputs, in synchronism with rising and falling edges of the clock signal.

REFERENCES:
patent: 4800530 (1989-01-01), Itoh et al.
patent: 5825709 (1998-10-01), Kobayashi
patent: 6081479 (2000-06-01), Ji et al.
patent: 6085300 (2000-07-01), Sunaga et al.
patent: 6512719 (2003-01-01), Fujisawa et al.
patent: 6914828 (2005-07-01), Kono
patent: 2002-25265 (2002-01-01), None

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