Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-16
2007-10-16
Ho, Tu-Tu V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S411000, C257SE29260, C438S259000, C438S270000, C438S272000, C438S589000
Reexamination Certificate
active
11192472
ABSTRACT:
NROM EEPROM memory devices and arrays are described that facilitate the use of vertical NROM memory cells and select gates in NOR or NAND high density memory architectures. Memory embodiments of the present invention utilize vertical select gates and NROM memory cells to form NOR and NAND NROM architecture memory cell strings, segments, and arrays. These NROM memory cell architectures allow for improved high density memory devices or arrays with integral select gates that can take advantage of the feature sizes semiconductor fabrication processes are generally capable of and yet do not suffer from charge separation issues in typical multi-bit NROM cells. The memory cell architectures also allow for mitigation of disturb and overerasure issues by placing the NROM memory cells behind select gates that isolate the memory cells from their associated bit/data lines and/or source lines.
REFERENCES:
patent: 4184207 (1980-01-01), McElroy
patent: 4420504 (1983-12-01), Cooper
patent: 4558344 (1985-12-01), Perlegos
patent: 4630085 (1986-12-01), Koyama
patent: 4755864 (1988-07-01), Ariizumi
patent: 4774556 (1988-09-01), Fujii
patent: 4785199 (1988-11-01), Kolodny
patent: 4881114 (1989-11-01), Mohsen
patent: 5241496 (1993-08-01), Lowrey
patent: 5330930 (1994-07-01), Chi
patent: 5378647 (1995-01-01), Hong
patent: 5379253 (1995-01-01), Bergemont
patent: 5397725 (1995-03-01), Wolstenholme
patent: 5461249 (1995-10-01), Ozawa
patent: 5463579 (1995-10-01), Shimoji
patent: 5467305 (1995-11-01), Bertin
patent: 5576236 (1996-11-01), Chang
patent: 5620913 (1997-04-01), Lee
patent: 5734609 (1998-03-01), Choi et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5792697 (1998-08-01), Wen
patent: 5858841 (1999-01-01), Hsu
patent: 5888868 (1999-03-01), Yamazaki
patent: 5909618 (1999-06-01), Forbes
patent: 5911106 (1999-06-01), Tasaka
patent: 5936274 (1999-08-01), Forbes
patent: 5946558 (1999-08-01), Hsu
patent: 5966603 (1999-10-01), Eitan
patent: 5973352 (1999-10-01), Noble
patent: 5973356 (1999-10-01), Noble
patent: 5991225 (1999-11-01), Forbes
patent: 5994745 (1999-11-01), Hong
patent: 6011725 (2000-01-01), Eitan
patent: 6028342 (2000-02-01), Chang
patent: 6030871 (2000-02-01), Eitan
patent: 6044022 (2000-03-01), Nachumovsky
patent: 6072209 (2000-06-01), Noble
patent: 6081456 (2000-06-01), Dadashev
patent: 6091102 (2000-07-01), Sekariapuram
patent: 6104061 (2000-08-01), Forbes
patent: 6108240 (2000-08-01), Lavi
patent: 6133102 (2000-10-01), Wu
patent: 6134156 (2000-10-01), Eitan
patent: 6134175 (2000-10-01), Forbes
patent: 6143636 (2000-11-01), Forbes
patent: 6147904 (2000-11-01), Liron
patent: 6150687 (2000-11-01), Noble
patent: 6153468 (2000-11-01), Forbes
patent: 6157570 (2000-12-01), Nachumovsky
patent: 6172396 (2001-01-01), Chang
patent: 6174758 (2001-01-01), Nachumovsky
patent: 6175523 (2001-01-01), Yang
patent: 6181597 (2001-01-01), Nachumovsky
patent: 6184089 (2001-02-01), Chang
patent: 6191470 (2001-02-01), Forbes
patent: 6201282 (2001-03-01), Eitan
patent: 6201737 (2001-03-01), Hollmer
patent: 6204529 (2001-03-01), Lung
patent: 6207504 (2001-03-01), Hsieh
patent: 6208164 (2001-03-01), Noble
patent: 6208557 (2001-03-01), Bergemont
patent: 6215702 (2001-04-01), Derhacobian
patent: 6218695 (2001-04-01), Nachumovsky
patent: 6219299 (2001-04-01), Forbes
patent: 6222768 (2001-04-01), Hollmer
patent: 6222769 (2001-04-01), Maruyama
patent: 6238976 (2001-05-01), Noble
patent: 6240020 (2001-05-01), Yang
patent: 6243300 (2001-06-01), Sunkavalli
patent: 6249460 (2001-06-01), Forbes
patent: 6251731 (2001-06-01), Wu
patent: 6255166 (2001-07-01), Ogura
patent: 6256231 (2001-07-01), Lavi
patent: 6266281 (2001-07-01), Derhacobian
patent: 6269023 (2001-07-01), Derhacobian
patent: 6272043 (2001-08-01), Hollmer
patent: 6275414 (2001-08-01), Randolph
patent: 6282118 (2001-08-01), Lung
patent: 6291854 (2001-09-01), Peng
patent: 6297096 (2001-10-01), Boaz
patent: 6303436 (2001-10-01), Sung
patent: 6327174 (2001-12-01), Jung
patent: 6337808 (2002-01-01), Forbes
patent: 6348711 (2002-02-01), Eitan
patent: 6377070 (2002-04-01), Forbes
patent: 6380585 (2002-04-01), Odanaka
patent: 6383871 (2002-05-01), Noble
patent: 6384448 (2002-05-01), Forbes
patent: 6392930 (2002-05-01), Jung
patent: 6417049 (2002-07-01), Sung
patent: 6417053 (2002-07-01), Kuo
patent: 6421275 (2002-07-01), Chen
patent: 6424001 (2002-07-01), Forbes
patent: 6429063 (2002-08-01), Eitan
patent: 6432778 (2002-08-01), Lai
patent: 6436764 (2002-08-01), Hsieh
patent: 6448601 (2002-09-01), Forbes
patent: 6448607 (2002-09-01), Hsu
patent: 6461949 (2002-10-01), Chang
patent: 6468864 (2002-10-01), Sung
patent: 6469342 (2002-10-01), Kuo
patent: 6476434 (2002-11-01), Noble
patent: 6477084 (2002-11-01), Eitan
patent: 6486028 (2002-11-01), Chang
patent: 6487050 (2002-11-01), Liu
patent: 6496034 (2002-12-01), Forbes
patent: 6498377 (2002-12-01), Lin
patent: 6514831 (2003-02-01), Liu
patent: 6531887 (2003-03-01), Sun
patent: 6545309 (2003-04-01), Kuo
patent: 6552387 (2003-04-01), Eitan
patent: 6559013 (2003-05-01), Pan
patent: 6566682 (2003-05-01), Forbes
patent: 6576511 (2003-06-01), Pan
patent: 6577533 (2003-06-01), Sakui
patent: 6580135 (2003-06-01), Chen
patent: 6580630 (2003-06-01), Liu
patent: 6597037 (2003-07-01), Forbes
patent: 6602805 (2003-08-01), Chang
patent: 6607957 (2003-08-01), Fan
patent: 6610586 (2003-08-01), Liu
patent: 6613632 (2003-09-01), Liu
patent: 6617204 (2003-09-01), Sung
patent: 6639268 (2003-10-01), Forbes
patent: 6642572 (2003-11-01), Kusumi
patent: 6657250 (2003-12-01), Rudeck
patent: 6680508 (2004-01-01), Rudeck
patent: 6720216 (2004-04-01), Forbes
patent: 6744094 (2004-06-01), Forbes
patent: 6762955 (2004-07-01), Sakui
patent: 6768162 (2004-07-01), Chang
patent: 2001/0001075 (2001-05-01), Ngo
patent: 2001/0004332 (2001-06-01), Eitan
patent: 2001/0011755 (2001-08-01), Tasaka
patent: 2001/0022375 (2001-09-01), Hsieh
patent: 2001/0038118 (2001-11-01), Sakui et al.
patent: 2002/0130356 (2002-09-01), Sung
patent: 2002/0142569 (2002-10-01), Chang
patent: 2002/0146885 (2002-10-01), Chen
patent: 2002/0149081 (2002-10-01), Goda
patent: 2002/0151138 (2002-10-01), Liu
patent: 2002/0177275 (2002-11-01), Liu
patent: 2002/0182829 (2002-12-01), Chen
patent: 2003/0042512 (2003-03-01), Gonzalez
patent: 2003/0043637 (2003-03-01), Forbes
patent: 2003/0057997 (2003-03-01), Sun
patent: 2003/0067807 (2003-04-01), Lin
patent: 2003/0113969 (2003-06-01), Cho
patent: 2003/0117861 (2003-06-01), Maayan
patent: 2003/0134478 (2003-07-01), Lai
patent: 2003/0235075 (2003-12-01), Forbes
patent: 2003/0235076 (2003-12-01), Forbes
patent: 2003/0235079 (2003-12-01), Forbes
patent: 2004/0016953 (2004-01-01), Lindsay
patent: 2004/0041203 (2004-03-01), Kim
patent: 2004/0063283 (2004-04-01), Guterman
patent: 2005/0032308 (2005-02-01), Hsiao
patent: 84303740.9 (1985-01-01), None
patent: 0 485 018 (1990-11-01), None
patent: 90115805.5 (1991-02-01), None
patent: 0 562 257 (1993-09-01), None
patent: 01113179.4 (2002-12-01), None
patent: 1 271 652 (2003-01-01), None
patent: 01053577 (1989-01-01), None
patent: 05251711 (1993-09-01), None
U.S. Appl. No. 10/738,783, filed Dec. 17, 2003, Forbes.
U.S. Appl. No. 10/738,556, filed Dec. 17, 2003, Forbes.
U.S. Appl. No. 10/769,116, filed Jan. 30, 2004, Forbes.
B. Eitan et al., “Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM™ Device,” IEEE Electron Device Lett., vol. 22, No. 11, (Nov. 2001) pp. 556-558, Copyright 2001 IEEE.
B. Eitan et al., “Spatial Characterization of Hot Carriers Injected into the Gate Dielectric Stack of a MOFSET Based on Non-Volatile Memory Device,” date unknown, pp. 58-60.
B. Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Lett, vol. 21, No. 11, (Nov. 2000), pp. 543-545, Copyright 2000 IEEE.
E. Maayan et al., “A 512Mb NROM Flash Data Storage Memory with 8MB/s Data Range,” Dig. IEEE Int. Solid-State Circuits Conf., San Francisco, (Feb 2002), pp. 1-8, Copyright Saifun Semiconductors Ltd. 2002.
E. Maayan et al., “A 512Mb NROM Flash Data Storage Memory with 8MB/s D
Ho Tu-Tu V.
Leffert Jay & Polglaze P.A.
LandOfFree
4F 2 EEPROM NROM memory arrays with vertical devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with 4F 2 EEPROM NROM memory arrays with vertical devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and 4F 2 EEPROM NROM memory arrays with vertical devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3901573