Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2000-01-24
2001-06-12
Bowers, Charles (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S625000, C438S629000, C438S641000, C438S674000
Reexamination Certificate
active
06245675
ABSTRACT:
BACKGROUND OF THE INVENTION
(1) Field of the Invention
The invention relates to a method of metallization in the fabrication of integrated circuits, and more particularly, to a method of increasing the electromigration lifetime of a tungsten plug in the manufacture of integrated circuits.
(2) Description of the Prior Art
Performance and cost constantly drive attempts to design increased performance while simultaneously shrinking feature sizes, particularly in interconnects. An example of increased design performance is the addition of a reservoir to the cathode end of an interconnect to increase electromigration lifetime by relying on the well known dependence of electromigration average lifetime with reservoir area. U.S. Pat. No. 5,506,450 to Lee et al, U.S. Pat. No. 5,864,179 to Koyama, and U.S. Pat. No. 5,760,477 to Cronin disclose extended end portions of the top Aluminum line over the tungsten plug to act as an aluminum reservoir. U.S. Pat. No. 5,654,216 to Adrian teaches a double aluminum line over a tungsten plug. U.S. Pat. No. 5,834,369 to Murakami et al discloses a diffusion preventing film over a tungsten plug to allow for an alignment margin.
SUMMARY OF THE INVENTION
A principal object of the present invention is to provide an effective and very manufacturable method of forming an improved electromigration resistant tungsten plug metallization in the fabrication of integrated circuits.
Another object of the invention is to provide a three-dimensional aluminum reservoir to increase the electromigration lifetime of a tungsten plug in the fabrication of integrated circuits.
Yet another object is to provide a method of achieving electromigration resistance performance without decreasing chip density in the fabrication of integrated circuits.
A still further object of the invention is to provide a method of increasing chip density without decreasing electromigration resistance performance.
Yet another object of the invention is to provide a method of improving electromigration resistance performance of an unlanded via.
In accordance with the objects of this invention a new method of metallization using a three-dimensional aluminum reservoir to increase the electromigration lifetime of a tungsten plug in the fabrication of integrated circuits is achieved.
REFERENCES:
patent: 5506450 (1996-04-01), Lee et al.
patent: 5654216 (1997-08-01), Adrian
patent: 5760477 (1998-06-01), Cronin
patent: 5793113 (1998-08-01), Oda
patent: 5834369 (1998-11-01), Murakami et al.
patent: 5864179 (1999-01-01), Koyama
patent: 5891804 (1999-06-01), Havemann et al.
patent: 6150272 (2000-11-01), Liu et al.
patent: 8204005 (1996-08-01), None
patent: 10229123 (1997-02-01), None
patent: 10294317 (1998-11-01), None
Liang Mong-Song
Shue Shau-Lin
Ackerman Stephen B.
Bowers Charles
Pham T.
Pike Rosemary L. S.
Saile George O.
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