Static information storage and retrieval – Read/write circuit – Particular read circuit
Reexamination Certificate
2010-07-06
2011-12-27
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Particular read circuit
C365S185140
Reexamination Certificate
active
08085607
ABSTRACT:
A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.
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Choi Jung-Dal
Jo Sung-Kyu
Park Ki-Tae
Ho Hoai V
Samsung Electronics Co,. Ltd.
Tran Anthan
Volentine & Whitt PLLC
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