Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2008-04-29
2010-02-16
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S311000, C438S270000, C438S297000, C257SE21140, C257SE21115, C257SE21121, C257SE21193, C257SE21231, C257SE21267, C257SE21396, C257SE21585, C257SE21646, C257SE21701
Reexamination Certificate
active
07662720
ABSTRACT:
In an embodiment, a 3-dimensional flash memory device includes: a gate extending in a vertical direction on a semiconductor substrate; a charge storing layer surrounding the gate; a silicon layer surrounding the charge storing layer; a channel region vertically formed in the silicon layer; and source/drain regions vertically formed on both sides of the channel region in the silicon layer. Integration can be improved by storing data in a 3-dimensional manner; a 2-bit operation can be performed by providing transistors on both sides of the gate.
REFERENCES:
patent: 4527257 (1985-07-01), Cricchi
patent: 4977436 (1990-12-01), Tsuchiya et al.
patent: 5283455 (1994-02-01), Inoue et al.
patent: 5365097 (1994-11-01), Kenney
patent: 6757196 (2004-06-01), Tsao et al.
patent: 6943373 (2005-09-01), Takaura et al.
patent: 6943407 (2005-09-01), Ouyang et al.
patent: 6995053 (2006-02-01), Schuele et al.
patent: 7238554 (2007-07-01), Schuele et al.
patent: 7382018 (2008-06-01), Kim et al.
patent: 2002/0001913 (2002-01-01), Kim
patent: 2002/0175365 (2002-11-01), Hirayama
patent: 2003/0038318 (2003-02-01), Forbes
patent: 2006/0011972 (2006-01-01), Graham et al.
patent: 2006/0044870 (2006-03-01), Bhattacharyya et al.
patent: 06-338602 (1994-12-01), None
patent: 10-093083 (1998-04-01), None
patent: 2000-0044900 (2000-07-01), None
patent: 2004-0043044 (2004-05-01), None
English language abstract of Japanese Publication No. 06-338602.
English language abstract of Japanese Publication No. 10-093083.
English language abstract of Korean Publication No. 2000-0044900.
English language abstract of Korean Publication No. 2004-0043044.
English language abstract of Japanese Publication No. 06-338602, dated Jun. 12, 1994.
English language abstract of Japanese Publication No. 10-093083, dated Apr. 10, 1998.
English language abstract of Korean Publication No. 2000-0044900, dated Jul. 15, 2000.
English language abstract of Korean Publication No. 2004-0043044, dated May 22, 2004.
Kim Dong-Won
Kim Sung-Min
Yoon Jae-Man
Yun Eun-Jung
Muir Patent Consulting, PLLC
Nhu David
Samsung Electronics Co,. Ltd.
LandOfFree
3-Dimensional flash memory device and method of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with 3-Dimensional flash memory device and method of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and 3-Dimensional flash memory device and method of fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4168206