(111) Group II-VI epitaxial layer grown on (111) silicon substra

Details (111) Group II-VI epitaxial layer grown on (111) silicon substra (111) Group II-VI epitaxial layer grown on (111) silicon substra

1992-12-09

1994-04-12

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437132, 257188, 257189, 257190, 148 334, H01L 2120

Patent

active

053022327

ABSTRACT:
A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the <110> direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.

REFERENCES:
patent: 4828938 (1989-05-01), Lichtmann et al.

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