4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Single-crystal of pure or intentionally doped element {c30b 29/0
  6. Carbon (e.g., diamond) {c30b 29/04}
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Method for forming a single crystal diamond film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Single-crystal of pure or intentionally doped element {c30b 29/0 – Carbon (e.g. – diamond) {c30b 29/04}
Patent

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Method of forming diamond film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Single-crystal of pure or intentionally doped element {c30b 29/0 – Carbon (e.g. – diamond) {c30b 29/04}
Reexamination Certificate

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