4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. Fully-sealed or vacuum-maintained chamber
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Silicon carbide single crystal and method and apparatus for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber
Reexamination Certificate

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Silicon carbide single crystal and production thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber
Reexamination Certificate

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Systems and methods for the production of highly tetrahedral...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber
Reexamination Certificate

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