4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Apparatus
  6. With means for treating single-crystal
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Silicon single crystal wafer annealing method and equipment, and

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal
Patent

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Single crystal processing by in-situ seed injection

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for treating single-crystal
Reexamination Certificate

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