Silicon single crystal wafer annealing method and equipment, and

Details Silicon single crystal wafer annealing method and equipment, and Silicon single crystal wafer annealing method and equipment, and

1999-06-08

2000-06-13

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for treating single-crystal

206710, 206711, 206712, 206832, 206833, 211 4118, 118500, 118724, 118728, 432253, F27D 500, B05C 1300, C30B 3500

Patent

active

060744790

ABSTRACT:
This invention anneals a vertical stack of two or more groups of unseparated wafers, with approximately 10 wafers in each group. The invention makes it possible to anneal more wafers in a single annealing operation under a variety of conditions, including: oxygen outer diffusion annealing to form a denuded zone; annealing to control bulk micro defects and provide intrinsic gettering functions; annealing to enhance gate oxide integrity by eliminating crystal-originated particles from the wafer surface and internal grown-in or as-grown defects; and suppression of dislocation and slip in elevated temperature environments.

REFERENCES:
patent: 5492229 (1996-02-01), Tanaka et al.
patent: 5931662 (1999-08-01), Adachi et al.

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