Semiconductor device with improved noise resistivity

Details Semiconductor device with improved noise resistivity Semiconductor device with improved noise resistivity

1998-11-02

2000-12-26

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257546, 257547, 257355, 257365, 257503, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

061664154

ABSTRACT:
A dummy pattern that is inserted to stabilize the form of a transistor active region is implanted with an impurity of the same conductivity type as a well, and the impurity-doped region of the dummy pattern is supplied with a potential through a metal interconnection. Hence, fluctuation of a well potential due to noise hardly occurs, and a semiconductor device enduring latch up, for example, to a greater extent can be provided.

REFERENCES:
patent: 5066997 (1991-11-01), Sakurai et al.
patent: 5235201 (1993-08-01), Honna
patent: 5304835 (1994-04-01), Imai et al.
patent: 5371032 (1994-12-01), Nishihara
patent: 5679971 (1997-10-01), Tamba et al.
patent: 5767542 (1998-06-01), Nakamura
patent: 5898205 (1999-04-01), Lee
patent: 5986867 (1999-11-01), Duvvury et al.

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