Semiconductor device having channel refractive index in first an

Details Semiconductor device having channel refractive index in first an Semiconductor device having channel refractive index in first an

1998-01-21

2000-04-25

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257 65, 257 66, 257 67, 257 72, 257350, 257410, H01L 2126

Patent

active

060547391

ABSTRACT:
In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.

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