Protection against overvoltages of an integrated MOS power trans

Details Protection against overvoltages of an integrated MOS power trans Protection against overvoltages of an integrated MOS power trans

1998-05-27

2000-04-25

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257173, H01L 2701, H01L 2712, H01L 310392

Patent

active

060547405

ABSTRACT:
The present invention relates to a protection device for a component including a vertical MOS power transistor and logic components. The protection device includes a first zener diode, a first terminal of which corresponds to the substrate and a second terminal of which corresponds to a region of the second type of conductivity formed in the substrate. It also includes a second zener diode of the same type of conductivity as the first zener diode but of higher avalanche voltage, the second terminals of both zener diodes being connected to a circuit for starting the power transistor via a logic circuit which only becomes conductive when one of its inputs is high and distinct from the other input.

REFERENCES:
patent: 5162966 (1992-11-01), Fujihira
patent: 5521414 (1996-05-01), Palara
patent: 5543645 (1996-08-01), Barret et al.
patent: 5563436 (1996-10-01), Barret et al.
patent: 5739998 (1998-04-01), Wada
patent: 5818088 (1998-10-01), Ellis
patent: 5828089 (1998-10-01), Bernier

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