Low resistance metal contact technology

Details Low resistance metal contact technology Low resistance metal contact technology

1998-11-06

2000-12-26

Wilczewski, Mary

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438656, 438674, 438682, 438683, H01L 2144

Patent

active

061659029

ABSTRACT:
Low resistance contacts are formed on source/drain regions and gate electrodes by selectively depositing a reaction barrier layer and selectively depositing a metal layer on the reaction barrier layer. Embodiments include selectively depositing an alloy of cobalt and tungsten which functions as a reaction barrier layer preventing silicidation of a layer of nickel or cobalt selectively deposited thereon. Embodiments also include tailoring the composition of the cobalt tungsten alloy so that a thin silicide layer is formed thereunder for reduced contact resistance.

REFERENCES:
patent: 5205287 (1993-04-01), Joshi et al.
patent: 5654570 (1997-08-01), Agnello
patent: 5807788 (1998-09-01), Brodsky et al.
patent: 5904564 (1999-05-01), Park

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