Semiconductor nonvolatile storage and method of fabricating the

Details Semiconductor nonvolatile storage and method of fabricating the Semiconductor nonvolatile storage and method of fabricating the

1999-06-09

2000-12-26

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438278, 438281, 438290, 438600, 438128, 438129, 438130, 438211, 438257, 438265, 257390, 257529, 257530, H01L 218234

Patent

active

061658510

ABSTRACT:
A semiconductor nonvolatile storage that is an inter-gate insulating film breakdown type memory is configured by providing a field oxide film on a semiconductor substrate 1, a gate electrode on the field oxide film and a mask oxide film on the surface of the gate electrode, forming an opening m the mask oxide film and forming a memory oxide film on the gate electrode exposed thereat, providing a memory gate electrode of a size extending from over the memory oxide film to over the mask oxide film, and making the thickness of the memory oxide film thinner than the thickness of the mask oxide film.

REFERENCES:
patent: 4635345 (1987-01-01), Hankins et al.
patent: 5509220 (1996-04-01), Eltoukhy et al.
patent: 5550404 (1996-08-01), Yen et al.
patent: 5843226 (1998-12-01), Zhao et al.

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