Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-19
2000-12-26
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438253, H01L 218242
Patent
active
061658332
ABSTRACT:
A semiconductor processing method includes forming a conductively doped plug of semiconductive material within a first insulative layer. A barrier layer to out diffusion of dopant material from the semiconductive material is formed over the doped plug. Examples include undoped oxide, such as silicon dioxide, and Si.sub.3 N.sub.4. A second insulative layer is formed over the barrier layer. Conductive material is formed through the second insulative layer and into electrical connection with the doped plug. In another implementation, spaced first and second conductively doped regions of semiconductive material are formed. A barrier layer to out diffusion of dopant material from the semiconductive material is formed over at least one of the first and second regions, and preferably over both. Then, a capacitor having a capacitor dielectric layer comprising Ta.sub.2 O.sub.5 is formed over the other of the first and second regions. Conductive material is formed over and in electrical connection with the one of the first and second regions.
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Parekh Kunal R.
Thakur Randhir P. S.
Micro)n Technology, Inc.
Tsai Jey
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