Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-06-14
2000-12-26
Nelms, David
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438239, H01L 218242
Patent
active
061658324
ABSTRACT:
A method for manufacturing a capacitor includes the step of depositing metal thin film layers and resin layers alternating with each other, thereby forming a layered product. The thickness of the resin layer and the metal thin film or the width of margins are measured during the deposition. At a predetermined point in the process of the deposition, the number of layers to be deposited further is determined, based on the measured values and an intended electrostatic capacitance or deposition thickness. The thus obtained capacitor has the intended electrostatic capacitance or deposition thickness with a small dispersion.
REFERENCES:
patent: 5663089 (1997-09-01), Tomozawa et al.
Echigo Noriyasu
Honda Kazuyoshi
Miyake Toru
Odagiri Masaru
Sunagare Nobuki
Matsushita Electric - Industrial Co., Ltd.
Nelms David
Nhu David
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