Method for manufacturing a capacitor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438239, H01L 218242

Patent

active

061658324

ABSTRACT:
A method for manufacturing a capacitor includes the step of depositing metal thin film layers and resin layers alternating with each other, thereby forming a layered product. The thickness of the resin layer and the metal thin film or the width of margins are measured during the deposition. At a predetermined point in the process of the deposition, the number of layers to be deposited further is determined, based on the measured values and an intended electrostatic capacitance or deposition thickness. The thus obtained capacitor has the intended electrostatic capacitance or deposition thickness with a small dispersion.

REFERENCES:
patent: 5663089 (1997-09-01), Tomozawa et al.

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