Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-11-20
2000-12-26
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438210, 438385, 438533, 438586, H01L 218244
Patent
active
061658316
ABSTRACT:
A method of fabricating a static random access memory. A substrate having a gate is provided. A source/drain region is formed in the substrate beside the gate. A metal silicide layer is formed on the source/drain region and the gate region. A conductive line which is electrically coupled to the metal silicide layer on the source/drain region is formed over the substrate. A dielectric layer having a via is formed over the substrate. A portion of the conductive line is exposed by the via. A polysilicon conductive line is formed conformably to the via and the dielectric layer. The polysilicon conductive line is electrically coupled to the conductive line. An ion implantation is performed to form a poly load of the static random access memory.
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patent: 6022794 (2000-02-01), Hsu
Trinh Michael
United Microelectronics Corp.
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