Method to decrease capacitance depletion, for a DRAM capacitor,

Details Method to decrease capacitance depletion, for a DRAM capacitor, Method to decrease capacitance depletion, for a DRAM capacitor,

1998-11-02

2000-12-26

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438254, 438398, 438397, 438256, H01L 218234

Patent

active

061658308

ABSTRACT:
A process for creating a DRAM capacitor structure, featuring a doped polysilicon layer, overlying a crown shaped storage node electrode, has been developed. The process features the use of an HSG silicon layer, on a doped amorphous silicon, storage node shape, with the HSG silicon layer supplying increased surface area, and thus increased capacitance, for the DRAM capacitor. A doped polysilicon layer, selectively deposited on the underlying HSG silicon layer, supplies additional dopant to the HSG silicon layer, residing on the doped amorphous silicon, storage node shape, thus minimizing a capacitance depletion phenomena, that can be present with lightly doped storage node structures.

REFERENCES:
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5612558 (1997-03-01), Harshfield
patent: 5650351 (1997-07-01), Wu
patent: 5696014 (1997-12-01), Figura
patent: 5753558 (1998-05-01), Akram et al.
patent: 5753559 (1998-05-01), Yew et al.
patent: 5837582 (1998-11-01), Su
patent: 5877052 (1999-03-01), Lin et al.
patent: 5913119 (1999-06-01), Lin et al.

Affiliated with

Also associated with

Rating

Method to decrease capacitance depletion, for a DRAM capacitor, does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to decrease capacitance depletion, for a DRAM capacitor, , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to decrease capacitance depletion, for a DRAM capacitor, will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-993913