Method of evaluating a tunnel insulating film

Details Method of evaluating a tunnel insulating film Method of evaluating a tunnel insulating film

1997-03-18

2000-04-25

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 18, H01L 218247

Patent

active

060543515

ABSTRACT:
The present invention provides a method of evaluating a tunnel insulating film of a first MOS FET having a semiconductor substrate, a control gate, a floating gate and a tunnel insulating film formed between the semiconductor substrate and the floating gate which is injected with electrons from the semiconductor substrate by applying a direct current voltage to the control gate. The method is achieved by preparing a second MOS FET having a tunnel insulating film formed on a semiconductor substrate in the same batch process of forming the tunnel insulating film in the first MOS FET, measuring a subthreshold swing of the second MOS FET, applying a direct current electric field to the tunnel insulating film in the second MOS FET for a predetermined time, remeasuring the subthreshold swing of the second MOS FET, and evaluating the tunnel insulating film in the first MOS FET by using a change of the subthreshold swing before and after the applying step.

REFERENCES:
patent: 4243937 (1981-01-01), Multani et al.
patent: 5541129 (1996-07-01), Tsunoda
patent: 5604699 (1997-02-01), Cappelletti et al.

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