Microelectronic capacitors having tantalum pentoxide dielectrics

Details Microelectronic capacitors having tantalum pentoxide dielectrics Microelectronic capacitors having tantalum pentoxide dielectrics

1998-09-14

2000-09-12

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, H01L 31119

Patent

active

061181463

ABSTRACT:
A microelectronic capacitor is formed by forming a first tantalum pentoxide film on a conductive electrode and annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone. The forming step and annealing step are then repeated at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film. A second conductive electrode may then be formed on the tantalum pentoxide layer. The resultant tantalum pentoxide layer can have a thickness which exceeds 45 .ANG., yet has a reduced leakage current by filling the oxygen vacancies across the thickness thereof.

REFERENCES:
patent: 4937650 (1990-06-01), Shinriki et al.
patent: 5111355 (1992-05-01), Anand et al.
patent: 5254505 (1993-10-01), Kamiyama
patent: 5387546 (1995-02-01), Maeda et al.
patent: 5661319 (1997-08-01), Fujii et al.
patent: 5688724 (1997-11-01), Yoon et al.
Shinriki et al., "UV-O.sub.3 and Dry-O.sub.2 : Two-Step Annealed Chemical Vapor-Deposited Ta.sub.2 O.sub.5 Films for Storage Dielectrics of 64-Mb DRAM's", IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991, p. 455-462.

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