Semiconductor device having metallic interconnects formed by gri

Electricity: conductors and insulators – Conduits – cables or conductors – Preformed panel circuit arrangement

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Other Related Categories

257700, H01L 2302, H01L 2312, H01L 2348, H01L 2340

Type

Patent

Status

active

Patent number

051702452

Description

ABSTRACT:
This invention relates to a ceramic module and to methods for forming protruding, upstanding electrically conducting pins by the selective abrasion of a surface 18 of a multilayered ceramic module 10. An abrasive blasting device 40 is disposed adjacent to the surface 18 for directing a stream of abrasive particles 42 against the surface. The particles 42 strike both metallic conductors 20 and 22 and also the ceramic material of the layer 14. Inasmuch as the ceramic material is relatively hard and brittle as compared to the ductile metallic conductors the abrasive particles 42 abrade away the ceramic layer 14 at a faster rate than the ductile metallic material of the conductors 20 and 22. The abrasive particles 42 may be comprised of any suitable abrasive, such as Al.sub.2 O.sub.3, SiC or WC. The module may be rotated beneath a nozzle of the grit blasting device, the nozzle being linearly translated above the surface being abraded.

REFERENCES:
patent: 2861911 (1958-11-01), Martin et al.
patent: 2984597 (1961-05-01), Hennes
patent: 3225495 (1965-12-01), De Vries
patent: 3375181 (1968-03-01), Koech et al.
patent: 3509624 (1970-05-01), Boucher
patent: 3555364 (1971-01-01), Matcovich
patent: 3617817 (1971-11-01), Kawakatsu
patent: 3888054 (1975-06-01), Maselli
patent: 4020535 (1977-05-01), Cuneo et al.
patent: 4047286 (1977-09-01), Lob et al.
patent: 4082394 (1978-04-01), Gedney et al.
patent: 4091125 (1978-05-01), Delgadillo
patent: 4109377 (1978-08-01), Blazick et al.
patent: 4159222 (1979-06-01), Lebow et al.
patent: 4221047 (1980-09-01), Narken et al.
patent: 4232059 (1980-11-01), Proffitt
patent: 4389771 (1983-06-01), Cassidy et al.
patent: 4575396 (1986-03-01), Matsumoto et al.
patent: 4612737 (1986-09-01), Addee et al.
patent: 4724472 (1988-02-01), Sugimoto et al.
patent: 4727410 (1988-02-01), Higgins, III
patent: 4733503 (1988-03-01), Gallant et al.
patent: 4750031 (1988-06-01), Miller et al.
patent: 4827327 (1989-05-01), Miyaguchi et al.
patent: 4922324 (1990-05-01), Sudo

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device having metallic interconnects formed by gri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having metallic interconnects formed by gri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having metallic interconnects formed by gri will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-963881

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.