Copper adhesion to a diffusion barrier surface and method for sa

Details Copper adhesion to a diffusion barrier surface and method for sa Copper adhesion to a diffusion barrier surface and method for sa

1996-09-20

1999-06-01

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438677, 438674, H01L 21443

Patent

active

059096373

ABSTRACT:
A method has been provided for improving the adhesion of Cu to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The diffusion barrier material is exposed to either a reactive gas species, or a plasma containing a reactive gas. By removing contaminants on the surface of the diffusion barrier, and forming weak molecular bonds between the diffusion barrier surface and the reactive gas, the diffusion barrier surface is protected and prepared for Cu adhesion. Cu, breaking the bonds between the reactive gas and diffusion barrier surface, readily bonds to the diffusion material for improved adhesion between surfaces. The diffusion barrier surface, prepared with the reactive gas, allows the IC to be stored, delaying the Cu deposition to more convenient times in the IC fabrication process. An Cu conductor interface adhered to the diffusion barrier of an integrated circuit is also provided.

REFERENCES:
patent: 5240879 (1993-08-01), De Bruin
patent: 5429987 (1995-07-01), Allen
patent: 5605724 (1997-02-01), Hong et al.
patent: 5712193 (1998-01-01), Hower et al.
patent: 5843843 (1998-12-01), Lee et al.
Article entitled "Chemical Mechanical Polishing of Copper Metallized Multilevel Interconnect Devices" presented at the 1995 Proceedings--12.sup.th International VLSI Multilevel Interconnection Donference (VMIC), Jun. 27-29, 1995, Santa Clara, CA, Catalog No. 95ISMIC--104--pp. 505-507.
Article entitled "Copper Interconnection with Tungsten Cladding for ULSI" presented at the 1991 Symposium on VLSI Technology, Digest of Technical Papers, May 28-30, 1991, pp. 37-40.
Article entitled Encapsulated Copper Interconnection Devices Using Sidewall Barriers, presented at the 1991 VMIC Conference, Jun. 11-12, 1991, pp. 99-108.

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