Single-side corrugated cylindrical capacitor structure of high d

Details Single-side corrugated cylindrical capacitor structure of high d Single-side corrugated cylindrical capacitor structure of high d

1997-02-05

1999-06-01

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438240, H01L 218242

Patent

active

059096217

ABSTRACT:
A method of fabricating single-side corrugated cylindrical capacitor of high density Dynamic Random Access Memory (DRAM) cells. The corrugated capacitor shape is achieved by depositing the thermal chemical vapor deposition (CVD) oxide and the plasma-enhanced CVD (PECVD) oxide alternating layers. Then, the thermal CVD oxide and the PECVD oxide layers are lateral etched by hydrofluoric acid (HF). Because hydrofluoric acid (HF) etches the thermal CVD oxide at a slower rate than etches the PECVD oxide, a cavity (undercut) is formed in each PECVD oxide layer. Therefore, the single-side corrugated shape capacitor surface is created that increases the surface area of the capacitor considerably. The cylindrical capacitor storage node of the DRAM capacitor of this method has much greater surface area so as to increase the capacitance value of the DRAM capacitor, that can achieve high packing density of the integrated circuit devices.

REFERENCES:
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patent: 5409856 (1995-04-01), Jun
patent: 5656536 (1997-08-01), Wu
"Silicon Processing for the VLSI Era, vol. 1--Process Technology" by S. Wolf and R.N. Tauber, Lattice Press, 1986 (pp. 188-191).

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