Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-04-10
2000-12-05
Booth, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438653, 438629, 438618, H01L 214763
Patent
active
061566381
ABSTRACT:
The invention includes methods of restricting diffusion between materials. First and second different materials which are separated by a barrier layer capable of restricting diffusion of material between the first and second materials are provided. The barrier layer is formed by forming a first layer of a third material over the first material. A second layer of the third material is formed on the first layer. The second material is formed over the second layer of the third material. In another aspect, the invention relates to diffusion barrier layers. In one implementation, such a layer comprises a composite of two immediately juxtaposed and contacting, yet discrete, layers of the same material. In another aspect, the invention relates to integrated circuitry. In one implementation, a semiconductive substrate has a conductive diffusion region formed therein. An insulative dielectric layer is received over the substrate and has a conductive contact formed therein which is in electrical connection with the diffusion region. The conductive contact comprises a conductive barrier layer proximate the diffusion region. The conductive barrier layer comprises a composite of two immediately juxtaposed and contacting, yet discrete, layers of the same conductive material.
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Agarwal Vishnu K.
Derderian Garo J.
Booth Richard
Micro)n Technology, Inc.
Simkovic Viktor
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