Method of fabricating local interconnect

Details Method of fabricating local interconnect Method of fabricating local interconnect

1998-10-15

2000-12-05

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438658, 438722, H01L 2144

Patent

active

061566349

ABSTRACT:
A method of fabricating a local interconnect uses hydrogen plasma or hydrogen thermal treatment to form a local interconnect by transforming a part of the refractory metal oxide to a conductor. The local interconnect can be used to electrically connect two electrodes in a device, or to electrically connect same electrodes of different devices.

REFERENCES:
patent: 4039698 (1977-08-01), Fraser et al.
patent: 4931411 (1990-06-01), Tigelaar et al.
patent: 5122225 (1992-06-01), Douglas
Classification Definitions of the United States Patent and Trademark Office. Dec. 1996 Edition, Rev. 3, Jun. 1998. p. 257-33.
Windows Document: FR2398385. No translation.
H. Korki Ardakani; Electrical and optical properties of in situ "hydrogen-reduced" titanium dioxide thin films deposited by pulsed excimer laser ablation; Thin Solid Films, Aug. 1994.
A. A. Bos, N. S. Parekh, A. G. M. Jonkers; Formation of TiSi2 From Titanium and Amorphous Silicon Layers for Local Interconnect Technology; Thin Solid Films, Mar. 1991.

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