Method of making a semiconductor device with capacitor

Details Method of making a semiconductor device with capacitor Method of making a semiconductor device with capacitor

1998-11-12

2000-12-05

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438239, H01L 218244

Patent

active

061565997

ABSTRACT:
A semiconductor device comprising a semiconductor substrate and a capacitor formed on the semiconductor substrate, wherein the capacitor is formed of a multilayer comprising a first electrode disposed close to the semiconductor substrate, a second electrode disposed remote from the semiconductor substrate and a dielectric film formed of a metal oxide and interposed between the first electrode and the second electrode, and at least either one of the first and second electrodes contains oxygen and is constituted by an element selected from either one of Group 7A and Group 8 elements belonging to either one of the fifth and sixth periods of Periodic Table, the content of oxygen being in a range of 0.004 to 5 atom. %.

REFERENCES:
patent: 4959745 (1990-09-01), Suguro
patent: 5183780 (1993-02-01), Noguchi et al.
patent: 5336638 (1994-08-01), Suzuki et al.
patent: 5576928 (1996-11-01), Summerfelt et al.
patent: 5599741 (1997-02-01), Matsumoto et al.
patent: 5695815 (1997-12-01), Vaartstra
patent: 5985690 (1999-11-01), Fujikura

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