Coherent light generators – Particular active media – Semiconductor
Patent
1993-08-30
1994-08-16
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 99, H01S 319
Patent
active
053393260
ABSTRACT:
The invention provides a reflector for a semiconductor device which oscillates in the region from the near infrared region to the visible and short wavelength region, and a method of manufacturing the reflector. With an RF magnetron sputtering apparatus, a dielectric reflector of deposited films is formed on an end-face of a ZnSe semiconductor laser device. The deposited films are formed by 3 repetitions of alternately depositing an SiO.sub.2 film and a TiO.sub.2 film which each has an optical thickness of a quarter of the oscillating wavelength of the semiconductor laser device such that a reflectance at the oscillating wavelength of the laser device is over 90%. The dielectric reflector improves current--light output characteristics of the laser device compared to a conventional semiconductor laser device provided with no dielectric reflector.
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Mitsuyu Tsuneo
Ohkawa Kazuhiro
Tsujimura Ayumu
Epps Georgia Y.
Matsushita Electric - Industrial Co., Ltd.
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