Process for obtaining a layer of single-crystal germanium or sil

Details Process for obtaining a layer of single-crystal germanium or sil Process for obtaining a layer of single-crystal germanium or sil

1998-12-21

2000-09-12

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

117 89, 117 93, 117102, C30B 2300, H01L 2100

Patent

active

061177504

ABSTRACT:
The process consists in depositing, by chemical vapor deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450.degree. C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.

REFERENCES:
patent: 5442205 (1995-08-01), Brasen et al.
Meyer, et al., "The Deposition of Si-Ge Strained Layers from GeH.sub.4, SiH.sub.2,C1.sub.2, SiH.sub.4 and Si.sub.2 H.sub.6 ", Thin Solid Films, vol. 222, No. 1/2, Dec. 20, 1992, pp. 30-32.
Fitzgerald, et al., "Line, Point and Surface Defect Morphology of Graded, Relaxed GeSi Alloys on Si Substrates", Thin Solid Films, vol. 294, 1997, pp. 3-10.
Chen, et al., "Epitaxy of Si.sub.1-x Ge.sub.x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si.sub.2 H.sub.6 and GeH.sub.4 ", Japanese Journal of Applied Physics, vol. 34, No. 2/7b, Jul. 15, 1995, pp. L869-L871.
Aketagawa, et al., "Selective Epitaxial Growth of Si and Si.sub.1-x Ge.sub.x Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si.sub.2 H.sub.6 and GeH.sub.4 ", Japanese Journal of Applied Physics, vol. 31, No. 5a, May 1992, pp. 1432-1435.
Kissinger, et al., Stepwise Equilibrated Graded Ge.sub.z Si.sub.1-x Buffer With Very Low Threading Dislocation Density on Si(001), Applied Physics Letters, 66 (16), Apr. 17, 1995, pp. 2083-2085.
French International Search Report, dated Sep. 11, 1998.

Affiliated with

Also associated with

Rating

Process for obtaining a layer of single-crystal germanium or sil does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for obtaining a layer of single-crystal germanium or sil, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for obtaining a layer of single-crystal germanium or sil will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-95623