Method of forming high capacitive-coupling ratio and high speed

Details Method of forming high capacitive-coupling ratio and high speed Method of forming high capacitive-coupling ratio and high speed

1999-03-15

2000-09-12

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438257, H01L 21336

Patent

active

061177318

ABSTRACT:
The method of the present invention includes patterning a gate structure. Then, a polyoxide layer is formed on side walls of the gate structure. Then, silicon nitride side wall spacers are formed on the side walls of the gate structure. Then, source/drain structure of the device is fabricated. Next, the side wall spacers are removed to expose a portion of the source and drain. Then, an undoped amorphous silicon layer is formed on the surface of the gate structure, the oxide layer and the exposed source and drain. A dry oxidation process is used to convert the amorphous silicon layer into textured tunnel oxide at the interface of the substrate and the oxide. The oxide is then removed, and a further oxide is re-deposited on the gate and substrate. Polysilicon side wall spacers are then formed. A further polysilicon layer is subsequently deposited over the gate. Then, the polysilicon layer is patterned to define the floating gate. A dielectric is formed at the top of the floating gate. A conductive layer is formed on the dielectric layer as the control gate.

REFERENCES:
patent: 5384152 (1995-01-01), Chu et al.
patent: 5459088 (1995-10-01), Rha et al.
patent: 5767005 (1998-06-01), Doan et al.
patent: 5858853 (1999-01-01), Shishiguchi et al.
patent: 5872033 (1999-02-01), Figura
patent: 5930625 (1999-07-01), Lin et al.
patent: 5970342 (1999-10-01), Wu
patent: 5970360 (1999-10-01), Cheng et al.
patent: 5981334 (1999-11-01), Chien et al.
patent: 6040629 (2000-03-01), Shimizu et al.

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