Contrast enhanced photolithography

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430271, 430273, 430325, 430327, 430292, 430312, 430339, 430343, 430396, G03C 500

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049421131

ABSTRACT:
The contrast and sharpness of photoresist images is enhanced by depositing a layer of a photobleachable compound onto the photoresist layer. The photobleachable layer is sensitive to the light used to expose the photoresist and forms a contrast enhancement layer (CEL) on the photoresist layer. Fulgides and photochromic butyrolactones are selected for forming the photobleachable layer. Such compounds can be deposited from a hydrocarbon solution, such as toluene, and are soluble in the standard alkali, photoresist developers. The process is particularly advantageous for producing integrated circuits.

REFERENCES:
patent: 4663275 (1987-05-01), West et al.
patent: 4702996 (1987-10-01), Griffing et al.
G. H. Brown, "Techniques of Chemistry", vol. III, Photochromism, 1971, pp. 594-597 and 740-745.
Wiley Series on Photographic Science, etc. edited by Walter Clark, "Light-Sensitive Systems", Section by Jaromir Kosar, Wiley, 1974, pp. 380-383, 392-394, 396 and 397.
Solid State Technology, vol. 28, No. 5, May 1985, pp. 152-157, article by B. F. Griffing et al. entitled "Contrast Enhanced Lithography".
P. R. West et al, "Contrast Enhanced Photolithography: Application of Photobleaching Processes in Microlithography", Jour. of Imaging Science, vol. 30, Mar./Apr. 1986, pp. 65-68.

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