Microwave plasma etching method and apparatus

Details Microwave plasma etching method and apparatus Microwave plasma etching method and apparatus

1990-03-21

1991-05-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156345, 20419232, 20429838, B44C 122, C03C 1500, C03C 2506

Patent

active

050134019

ABSTRACT:
A microwave plasma etching method and apparatus for manufacturing electronic devices such as transistors. The method includes the steps of forming a stream of plasma from a processing gas within a plasma formation chamber by using an electric field produced by a microwave and an electron cyclotron resonance phenomenon produced by a magnetic field perpendicular to the electric field, and processing a substrate surface by locating it at the electron cyclotron resonance point and exposing it to a radiation of the plasma stream. The apparatus has a plasma formation chamber, a microwave introducing device connected to the plasma formation chamber, a magnetic field applying device for producing a magnetic field perpendicular to an electric field produced within the plasma formation chamber, and a gas introducing system for introducing a processing gas into the plasma formation chamber. A substrate holder is provided within the plasma formation chamber for holding a substrate at a resonance point of the electron cyclotron resonance phenomenon exhibited by the introduced microwave and applied magnetic field where the magnetic field has a particular strength.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4559100 (1985-12-01), Ninomiya et al.
patent: 4732761 (1988-03-01), Machida et al.
patent: 4844767 (1989-07-01), Okudaira et al.
patent: 4876983 (1989-10-01), Fukuda et al.
"Microwave Plasma Etching", by Keizo Suzuki et al., Japanese Journal of Applied Physics, vol. 16, No. 11, pp. 1979-1984.

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