Method of fabricating a high dielectric constant interpolysilico

Details Method of fabricating a high dielectric constant interpolysilico Method of fabricating a high dielectric constant interpolysilico

1997-11-25

2000-02-01

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218247

Patent

active

060202386

ABSTRACT:
A method of fabricating an interpolysilicon dielectric structure in a non-volatile memory includes the steps of forming a nitride layer 12 on a floating gate 10 and a high dielectric constant layer 14 on the nitride layer 12. A control gate 18 may be formed directly on the high dielectric constant layer 14, or on a thin layer 16 of an oxide or an oxynitride on the high dielectric constant layer 14.

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patent: 5661056 (1997-08-01), Takeuchi
patent: 5888870 (1999-03-01), Gardner et al.

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