Trench/hole fill processes for semiconductor fabrication

Details Trench/hole fill processes for semiconductor fabrication Trench/hole fill processes for semiconductor fabrication

1996-08-09

1999-09-21

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438653, H01L 21441

Patent

active

059566124

ABSTRACT:
A contact space filled with conductive material having good step coverage is disclosed. The contact space is formed in a dielectric layer with an upper surface. The contact space has sidewalls comprised of the dielectric layer and a bottom comprised of an underlying layer. The contact space is filled by first depositing a layer of an amorphous material such as TiAl.sub.3 over the bottom and sidewalls of the contact space, then filling the contact space with a metallic fill material such as an aluminum-containing fill material. The amorphous material is chosen particularly to have low reactivity with the metallic fill material, so that mobility of the metallic fill material over the surface upon which it is deposited is facilitated.

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