Method of forming a self aligned contact (SAC) window

Details Method of forming a self aligned contact (SAC) window Method of forming a self aligned contact (SAC) window

1997-01-31

1999-07-06

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, 438597, 438787, H01L 21336

Patent

active

059207809

ABSTRACT:
The present invention relates to a method of forming a self-aligned contact (SAC) window employing the liquid phase deposition (LPD) that allows low temperature deposition and selective growing of a LPD-SiO.sub.2 film as a stress-buffer layer to prevent WSi peeling during the formation of the SAC window. Specifically, the method comprises the steps of forming a nitride cap and a gate consisting of a WSi layer and a polysilicon layer over a surface of a silicon substrate followed by the formation of the sources and drain regions on the silicon substrate as well as by the process of forming the LPD-SiO.sub.2 film. A nitride spacer is formed at a sidewall of the nitride cap and the gate, and the SAC window is then formed by depositing a dielectric layer such as a SiO.sub.2 layer followed by exposing through a mask.

REFERENCES:
patent: 5073408 (1991-12-01), Goda et al.
patent: 5270233 (1993-12-01), Hamatake
patent: 5506006 (1996-04-01), Chou et al.
patent: 5523251 (1996-06-01), Hong
patent: 5547900 (1996-08-01), Lin
patent: 5691240 (1997-11-01), Yang

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