Method for depositing golden titanium nitride

Details Method for depositing golden titanium nitride Method for depositing golden titanium nitride

1997-02-26

1999-07-06

King, Roy V.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429805, C23C 1434

Patent

active

059193425

ABSTRACT:
Golden TiN films having uniform sheet resistance are deposited from a plasma sputtering chamber by initially saturating the chamber with nitrogen using high nitrogen gas flow rates and then reducing the nitrogen gas flow rates and reducing the pressure in the chamber during the deposition step.

REFERENCES:
patent: 4415421 (1983-11-01), Sasanuma
patent: 5089105 (1992-02-01), Tsutsui
patent: 5155063 (1992-10-01), Ito
Skerlavaj et al, "Optimizing optical properties of reactively sputtered titanium nitride films", Thin Solid Films, vol. 186 No. 1, Apr. 1, 1990, pp. 15-26.

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