Memory system

Static information storage and retrieval – Read/write circuit – Precharge

Patent

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Details

365205, 365210, 307238, G11C 1140

Patent

active

041387406

ABSTRACT:
A plurality of memory cells are connected to first and second data lines, and a circuit for applying a precharge voltage and a dummy cell are connected to each of first and second input lines which are connected to input terminal of a differential amplifier for detecting information of the memory cells. The first and second data lines are connected to the first and second input lines through first and second switching elements, respectively. When the stored signal of one memory cell connected to the first or second data line has been read out onto the first or second data line, the dummy cell connected to the second or first input line is read out selectively, with the result that a voltage of the second or first input line is set to the intermediate value of two different voltages, either of which the first or second input line could take after reading out the stored signal.

REFERENCES:
patent: 4044340 (1977-08-01), Itoh
patent: 4044341 (1977-08-01), Stewart et al.
patent: 4085457 (1977-08-01), Itoh

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