Method of forming a shallow trench isolation using oxide slope e

Details Method of forming a shallow trench isolation using oxide slope e Method of forming a shallow trench isolation using oxide slope e

1997-07-23

1999-07-27

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438701, 438713, 438691, H01L 2176

Patent

active

059306440

ABSTRACT:
A new method for planarizing a shallow trench isolation is disclosed by using a polysilicon layer or bottom anti-reflective coating (BARC) to form a reverse tone with a taper profile. The formation of the shallow trench isolation described includes a pad layer, and a silicon nitride layer formed-on a semiconductor wafer. Trenches are created by photolithography and dry etching processes. An oxide layer is formed in the trenches for the purpose of isolation. A polysilicon layer or bottom anti-reflective coating is subsequently formed on the oxide layer. A plurality of openings are generated in the polysilicon or the BARC layer. An etching is used to etch the oxide layer, thereby forming a reverse tone having a taper profile. A Chemical Mechanical Polishing is performed to planarize the surface of a semiconductor wafer.

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