Method of manufacturing complementary MOS semiconductor device

Details Method of manufacturing complementary MOS semiconductor device Method of manufacturing complementary MOS semiconductor device

1998-01-26

1999-07-27

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438592, 438217, 257413, H01L 2140, H01L 2144

Patent

active

059306122

ABSTRACT:
A method of manufacturing a complementary MOS device, comprising the steps of:

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patent: 5529940 (1996-06-01), Yamamoto et al.
patent: 5656839 (1997-08-01), Komori et al.
patent: 5723893 (1998-03-01), Yu et al.
patent: 5783850 (1998-07-01), Liau et al.
patent: 5817562 (1998-10-01), Chang et al.
patent: 5837601 (1998-11-01), Matsumoto
patent: 5840609 (1998-11-01), Hyeon et al.

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